| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 80 | |
| 7 | |
| -65 to 150 | |
| 1 | |
| 1.5@150mA@1.5A|2@600mA@3A | |
| 0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A | |
| 3 | |
| 100 | |
| 50@100mA@1V|30@500mA@1V|12@1.5A@1V | |
| 1500 | |
| -65 | |
| 150 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 10.85 |
| Largeur du paquet | 2.7 |
| Longueur du paquet | 7.6 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
Implement this versatile PNP MJE172G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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