Diodes IncorporatedMJD31C-13GP BJT
Trans GP BJT NPN 100V 3A 3900mW 3-Pin(2+Tab) TO-252 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 6 | |
| 1.2@375mA@3A | |
| 3 | |
| 25@1A@4V|10@3A@4V | |
| 3900 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.29 |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.58 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-252 |
| 3 | |
| Forme de sonde | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN MJD31C-13 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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