Reduced Price
MagnaChip SemiconductorMDD1951RHMOSFET
Trans MOSFET N-CH 60V 4.4A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 4.4 | |
| 100 | |
| 1 | |
| 45@10V | |
| 4.8@4.5V | |
| 470@30V | |
| 2000 | |
| 7.6 | |
| 15.2 | |
| 21.2 | |
| 7.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.1 mm |
| Longueur du paquet | 6.6 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? MagnaChip Semiconductor's MDD1951RH power MOSFET can provide a solution. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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