| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Quad Collector | |
| 1 | |
| 55 | |
| 35 | |
| 5 | |
| -55 to 150 | |
| 0.85@0.012A@1.2A | |
| 0.15@0.008A@0.8A|0.2@0.012A@1.2A|0.31@0.02A@2A | |
| 2 | |
| 100@1A@1.5V|100@1.5A@1.5V|100@2A@3V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 3 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP MBT35200MT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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