Semicoa SemiconductorsJANS2N2907AGP BJT
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18
| Not Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| -65 to 200 | |
| 1.3@15mA@150mA|2.6@50mA@500mA | |
| 0.4@15mA@150mA|1.6@50mA@500mA | |
| 0.6 | |
| 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Military | |
| Diamètre | 5.84(Max) |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-18 |
| 3 | |
| Forme de sonde | Through Hole |
Semicoa Semiconductors brings you the solution to your high-voltage BJT needs with their PNP JANS2N2907A general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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