| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 150 | |
| 37 | |
| 220@10V | |
| 350@10V | |
| 350 | |
| 16900@25V | |
| 890000 | |
| 54 | |
| 68 | |
| 90 | |
| 60 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Hauteur du paquet | 9.6(Max) |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
Compared to traditional transistors, IXFN44N100P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 890000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
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