| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 138 | |
| 18@10V | |
| 258@10V | |
| 258 | |
| 20@25V | |
| 890000 | |
| 16 | |
| 29 | |
| 79 | |
| 41 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Hauteur du paquet | 9.6(Max) |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
Create an effective common drain amplifier using this IXFN170N30P power MOSFET from Ixys Corporation. Its maximum power dissipation is 890000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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