| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 150 | |
| 36 | |
| 190@10V | |
| 102@10V | |
| 102 | |
| 5800@25V | |
| 650000 | |
| 22 | |
| 25 | |
| 80 | |
| 30 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH36N60P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 650000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
| EDA / CAD Models |
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