| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 22 | |
| 270@10V | |
| 50@10V | |
| 50 | |
| 2880@25V | |
| 350000 | |
| 21 | |
| 25 | |
| 72 | |
| 22 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.26(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXFH22N50P power MOSFET is for you. Its maximum power dissipation is 350000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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