| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±10 | |
| 2 | |
| -55 to 150 | |
| 4.3 | |
| 100 | |
| 25 | |
| 540@5V | |
| 6.1(Max)@5V | |
| 3.3(Max) | |
| 2(Max) | |
| 500 | |
| 250@25V | |
| 15@25V | |
| 1 | |
| 80 | |
| 2500 | |
| 17 | |
| 47 | |
| 16 | |
| 9.3 | |
| -55 | |
| 150 | |
| 10 | |
| 2.5 | |
| 17 | |
| 50 | |
| 4.1 | |
| 100 | |
| 2.5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this IRLR110PBF power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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