| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±10 | |
| 17 | |
| 180@5V | |
| 66(Max)@5V | |
| 1800@25V | |
| 3100 | |
| 52 | |
| 83 | |
| 44 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) |
| Largeur du paquet | 9.65(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
Create an effective common drain amplifier using this IRL640STRRPBF power MOSFET from Vishay. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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