| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±10 | |
| 15 | |
| 160@5V | |
| 28(Max)@5V | |
| 930@25V | |
| 88000 | |
| 48 | |
| 100 | |
| 22 | |
| 4.7 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
This IRL530PBF power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 88000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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