| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 3.1 | |
| 100 | |
| 100 | |
| 1200@10V | |
| 8.7(Max)@10V | |
| 8.7(Max) | |
| 200@25V | |
| 2500 | |
| 17 | |
| 27 | |
| 15 | |
| 10 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 6.22(Max) |
| Largeur du paquet | 2.39(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the IRFU9110PBF power MOSFET. Its maximum power dissipation is 2500 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.