| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 14 | |
| 100 | |
| 25 | |
| 100@10V | |
| 25(Max)@10V | |
| 25(Max) | |
| 11(Max) | |
| 5.8(Max) | |
| 290 | |
| 640@25V | |
| 79@25V | |
| 2 | |
| 360 | |
| 2500 | |
| 42 | |
| 58 | |
| 25 | |
| 13 | |
| -55 | |
| 150 | |
| 2.5 | |
| 56 | |
| 50 | |
| 6.1 | |
| 88 | |
| 1.5 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 6.22(Max) |
| Largeur du paquet | 2.39(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IRFU024PBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 2500 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with HEXFET technology.
| EDA / CAD Models |
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