| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 12 | |
| 140@10V | |
| 34(Max)@10V | |
| 34(Max) | |
| 1100@25V | |
| 42000 | |
| 58 | |
| 120 | |
| 20 | |
| 18 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 16.12(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.63(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, IRFI9Z34GPBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 42000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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