| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 7.7 | |
| 100 | |
| 100 | |
| 300@10V | |
| 38(Max)@10V | |
| 38(Max) | |
| 21(Max) | |
| 6.8(Max) | |
| 460 | |
| 860@25V | |
| 93@25V | |
| 2 | |
| 340 | |
| 42000 | |
| 39 | |
| 52 | |
| 31 | |
| 12 | |
| -55 | |
| 175 | |
| 31 | |
| 6.8 | |
| 120 | |
| 6.3 | |
| 0.4 | |
| 3.3 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 15.87 |
| Largeur du paquet | 4.7 |
| Longueur du paquet | 10.1 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common gate amplifier using this IRFI9530GPBF power MOSFET from Vishay. Its maximum power dissipation is 42000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.