| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 0.56 | |
| 1500@10V | |
| 15(Max)@10V | |
| 15(Max) | |
| 340@25V | |
| 1000 | |
| 19 | |
| 27 | |
| 7.3 | |
| 8.8 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.37(Max) |
| Largeur du paquet | 6.29(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | HVMDIP |
| 4 | |
| Forme de sonde | Through Hole |
If you need to either amplify or switch between signals in your design, then Vishay's IRFD9220PBF power MOSFET is for you. Its maximum power dissipation is 1000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.