| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 0.4 | |
| 3000@10V | |
| 8.9(Max)@10V | |
| 8.9(Max) | |
| 170@25V | |
| 1000 | |
| 13 | |
| 12 | |
| 11 | |
| 8 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.37(Max) |
| Largeur du paquet | 6.29(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | HVMDIP |
| 4 | |
| Forme de sonde | Through Hole |
This IRFD9210PBF power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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