| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4 | |
| -55 to 150 | |
| 11 | |
| 100 | |
| 25 | |
| 520@10V | |
| 52(Max)@10V | |
| 52(Max) | |
| 18(Max) | |
| 13(Max) | |
| 3400 | |
| 1423@25V | |
| 8.1@25V | |
| 2 | |
| 208 | |
| 170000 | |
| 28 | |
| 35 | |
| 32 | |
| 14 | |
| -55 | |
| 150 | |
| 30 | |
| 44 | |
| 510 | |
| 1.5 | |
| 0.25 | |
| 3.2 | |
| Installation | Through Hole |
| Hauteur du paquet | 8.79(Max) |
| Largeur du paquet | 4.65(Max) |
| Longueur du paquet | 10.36(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
If you need to either amplify or switch between signals in your design, then Vishay's IRFB11N50APBF power MOSFET is for you. Its maximum power dissipation is 170000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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