| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 6.7 | |
| 500@10V | |
| 12(Max)@10V | |
| 12(Max) | |
| 5.1(Max) | |
| 3.8(Max) | |
| 96 | |
| 270@25V | |
| 170 | |
| 43000 | |
| 31 | |
| 63 | |
| 10 | |
| 11 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IRF9Z10PBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 43000 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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