| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 2.5 | |
| 100 | |
| 25 | |
| 3000@10V | |
| 24(Max)@10V | |
| 24(Max) | |
| 13(Max) | |
| 3.3(Max) | |
| 700 | |
| 360@25V | |
| 37@25V | |
| 2 | |
| 92 | |
| 50000 | |
| 16 | |
| 8.6 | |
| 33 | |
| 8 | |
| -55 | |
| 150 | |
| 20 | |
| 8 | |
| 260 | |
| 1.6 | |
| 1.8 | |
| 12.6 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.65(Max) |
| Longueur du paquet | 10.51(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, IRF820PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 50000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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