| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 3.3 | |
| 100 | |
| 25 | |
| 1500@10V | |
| 8.2(Max)@10V | |
| 8.2(Max) | |
| 4.5(Max) | |
| 1.8(Max) | |
| 600 | |
| 140@25V | |
| 15@25V | |
| 2 | |
| 53 | |
| 36000 | |
| 8.9 | |
| 17 | |
| 14 | |
| 8.2 | |
| -55 | |
| 150 | |
| 20 | |
| 10 | |
| 7.8 | |
| 150 | |
| 2 | |
| Installation | Through Hole |
| Hauteur du paquet | 8.59 |
| Largeur du paquet | 4.45 |
| Longueur du paquet | 10.16 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this IRF610PBF power MOSFET from Vishay. Its maximum power dissipation is 36000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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