The ON Semiconductor MOSFET is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. Its maximum power dissipation is 350 mW. The maximum Drain Source Voltage of the product is 25 V and Gate Source Voltage is 8 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• 25 V, 0.68 A Continuous, 2 A Peak
• > RDS(ON) = 0.45 O @ VGS = 4.5 V
• > RDS(ON) = 0.6 O @ VGS= 2.7 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V Gate-Source Zener for ESD Ruggedness, > 6 kV Human Body Model
• Compact Industry Standard SOT-23 Surface Mount Package
• This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant
Application:
• Cellular phones
• Pagers
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um to 2um | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 8 | |
| 1 | |
| -55 to 150 | |
| 0.68 | |
| 100 | |
| 1 | |
| 450@4.5V | |
| 1.64@4.5V | |
| 0.45 | |
| 0.38 | |
| 50@10V | |
| 9@10V | |
| 0.65 | |
| 28 | |
| 350 | |
| 13 | |
| 8.5 | |
| 17 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 330@4.5V|440@2.7V | |
| 8 | |
| 2 | |
| 0.83 | |
| 1.7 | |
| 1.2 | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.