Diodes IncorporatedDXT2013P5-13GP BJT
Trans GP BJT PNP 100V 5A 3200mW 3-Pin(2+Tab) PowerDI 5 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 140 | |
| 100 | |
| 7 | |
| 1.1@400mA@4A | |
| 0.03@10mA@0.1A|0.09@100mA@1A|0.15@200mA@2A|0.34@400mA@4A | |
| 5 | |
| 100@10mA@1V|100@1A@1V|25@3A@1V|15@4A@1V | |
| 3200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1(Max) |
| Largeur du paquet | 5.37 |
| Longueur du paquet | 3.97 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Conditionnement du fournisseur | PowerDI 5 |
| 3 |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP DXT2013P5-13 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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