onsemiDTC143ZET1GBJT numérique
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-416 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to traditional BJ transistors, the NPN DTC143ZET1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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