onsemiDTA123EM3T5GBJT numérique
Trans Digital BJT PNP 50V 0.1A 600mW 3-Pin SOT-723 T/R
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 8@5mA@10V | |
| 2.2 | |
| 1 | |
| 0.25@5mA@10mA | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.5 |
| Largeur du paquet | 0.8 |
| Longueur du paquet | 1.2 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-723 |
| 3 | |
| Forme de sonde | Flat |
Compared to traditional BJ transistors, the PNP DTA123EM3T5G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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