Diodes IncorporatedDSS60600MZ4-13GP BJT
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 60 | |
| 7 | |
| -55 to 150 | |
| 1@100mA@1A | |
| 0.25@60mA@3A|0.35@600mA@6A|0.05@2mA@0.1A|0.07@100mA@1A|0.12@200mA@2A | |
| 6 | |
| 100 | |
| 150@0.5A@2V|120@1A@2V|100@2A@2V|70@6A@2V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6 |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Use this versatile PNP DSS60600MZ4-13 GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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