Diodes IncorporatedDSS5140V-7GP BJT
Trans GP BJT PNP 40V 1A 600mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single Quad Collector | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| 1.1@50mA@1A | |
| 0.14@1mA@100mA|0.17@50mA@500mA|0.31@100mA@1A | |
| 1 | |
| 300@1mA@5V|300@100mA@5V|250@500mA@5V|160@1A@5V | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.6(Max) |
| Largeur du paquet | 1.2 |
| Longueur du paquet | 1.6 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
If you require a general purpose BJT that can handle high voltages, then the PNP DSS5140V-7 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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