| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 2.8 | |
| 100 | |
| 1 | |
| 48@4.5V | |
| 7@4.5V | |
| 594.3@10V | |
| 580 | |
| 6.7 | |
| 9.8 | |
| 28.1 | |
| 7.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.15 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-363 |
| 6 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, DMN2075UDW-7 power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 580 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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