| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.65 | |
| 100 | |
| 100 | |
| 1 | |
| 1.4@10V | |
| 30@4.5V | |
| 6.9 | |
| 5400@15V | |
| 3100 | |
| 12 | |
| 26 | |
| 27 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 6 mm |
| Longueur du paquet | 5 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this CSD17556Q5B power MOSFET from Texas Instruments. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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