| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 23 | |
| 4@10V | |
| 8.3@4.5V | |
| 2.3 | |
| 1270@15V | |
| 3200 | |
| 5.3 | |
| 13 | |
| 13 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Compared to traditional transistors, CSD17506Q5A power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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