| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±10 | |
| 5 | |
| 42@4.5V | |
| 31@10V | |
| 31 | |
| 1230@10V | |
| 2000 | |
| 95 | |
| 100 | |
| 100 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.6 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | CPH |
| 6 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of ON Semiconductor's CPH6311-TL-E power MOSFET. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.

