onsemiBVSS123LT1GMOSFET
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| 0.8um to 3um | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.6 | |
| -55 to 150 | |
| 0.17 | |
| 50 | |
| 15 | |
| 6000@10V | |
| 20@25V | |
| 4@25V | |
| 1.6 | |
| 9 | |
| 225 | |
| 40 | |
| 20 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 20 | |
| 0.225 | |
| 0.68 | |
| 3.2 | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the BVSS123LT1G power MOSFET. Its maximum power dissipation is 225 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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