The ON Semiconductor MOSFET is particularly suited to low-voltage applications requiring a low-current high-side switch. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 360 mW. It has 1 number of elements per chip. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• -0.13 A, -50 V, RDS(ON) = 10 O at VGS = -5 V
• Voltage-Controlled P-Channel Small-Signal Switch
• High-Density Cell Design for Low RDS(ON)
• High Saturation Current
Application:
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um to 2um | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.13 | |
| 10 | |
| 15 | |
| 10000@5V | |
| 0.9@5V | |
| 0.9 | |
| 0.3 | |
| 0.2 | |
| 3 | |
| 73@25V | |
| 5@25V | |
| 0.8 | |
| 10 | |
| 360 | |
| 4.8 | |
| 6.3 | |
| 10 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2300@2.5V|1700@3V|1400@3.5V|1350@4V|1300@4.5V|1250@5V | |
| 0.36 | |
| 0.52 | |
| 350 | |
| 0.8 | |
| 2.3 | |
| 10 | |
| 1.2 | |
| 1.7 | |
| 20 | |
| 0.13 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
| EDA / CAD Models |
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