Diodes IncorporatedBFS17NTABJT FR
Trans RF BJT NPN 11V 0.05A 350mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 20 | |
| 11 | |
| <20 | |
| 0.5@5mA@25mA | |
| 3 | |
| 0.05 | |
| 8 to 100 | |
| 500 | |
| 500 | |
| 56@5mA@10V | |
| 50 to 120 | |
| 403 | |
| 0.8 | |
| 350 | |
| 3200(Typ) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.98 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the BFS17NTA RF bi-polar junction transistor, developed by Diodes Zetex, can properly function in the event of high radio frequency power situations. This product's minimum DC current gain is 56@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.5@5mA@25mA V. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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