Infineon Technologies AGBCV61BE6327HTSA1GP BJT
Trans GP BJT NPN 30V 0.1A 300mW 4-Pin SOT-143 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Base | |
| 2 | |
| 30 | |
| 30 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 100@0.1mA@5V|200@2mA@5V | |
| 300 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-143 |
| 4 | |
| Forme de sonde | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN BCV61BE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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