| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 5 | |
| -65 to 150 | |
| 0.5@100mA@1A | |
| 1 | |
| 10000 | |
| 50@5mA@10V|60@1A@1V|85@500mA@1V | |
| 1500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.57 |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP BCP69T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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