Diodes IncorporatedBCP5510TAGP BJT
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 0.5@50mA@500mA | |
| 1 | |
| 25@5mA@2V|40@150mA@2V|25@500mA@2V|63@150mA@2V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55 |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 |
Design various electronic circuits with this versatile NPN BCP5510TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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