Diodes IncorporatedBC856AS-7GP BJT
Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 80 | |
| 65 | |
| 5 | |
| -55 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 125@2mA@5V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.15 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-363 |
| 6 | |
| Forme de sonde | Gull-wing |
Use this versatile PNP BC856AS-7 GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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