Diodes IncorporatedBC846BLP4-7BGP BJT
Trans GP BJT NPN 65V 0.1A 1000mW 3-Pin X2-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| BC846BLP4-7B | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| 0.9@0.5mA@10mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 200@2mA@5V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.35(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | X2-DFN |
| 3 | |
| Forme de sonde | No Lead |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC846BLP4-7B GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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