Alpha and Omega SemiconductorAOT286LMOSFET
Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| TMOS | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.3 | |
| 70 | |
| 100 | |
| 1 | |
| 6@10V | |
| 44.5@10V | |
| 44.5 | |
| 3142@40V | |
| 2100 | |
| 11 | |
| 11 | |
| 32 | |
| 13.5 | |
| -55 | |
| 175 | |
| 4.7@10V|5@10V|5.8@6V|6.1@6V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.14 |
| Largeur du paquet | 4.45 |
| Longueur du paquet | 10.03 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Increase the current or voltage in your circuit with this AOT286L power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 167000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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