Alpha and Omega SemiconductorAON7296MOSFET
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.8 | |
| 12.5 | |
| 100 | |
| 1 | |
| 66@10V | |
| 3@4.5V|6.5@10V | |
| 6.5 | |
| 415@50V | |
| 3100 | |
| 2 | |
| 2 | |
| 15 | |
| 4 | |
| -55 | |
| 150 | |
| 54@10V|72@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.78 mm |
| Largeur du paquet | 3 mm |
| Longueur du paquet | 3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN-A EP |
| 8 |
Compared to traditional transistors, AON7296 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 20800 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology.
| EDA / CAD Models |
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