| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 40 | |
| ±20 | |
| 6 | |
| 30@10V | |
| 4.3@4.5V|8.9@10V | |
| 8.9 | |
| 516@20V | |
| 2000 | |
| 6.6 | |
| 3.6 | |
| 16.2 | |
| 6.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 24@10V|30@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, AO4840 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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