| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 38 | |
| ±25 | |
| 14 | |
| 10@20V | |
| 63@10V | |
| 63 | |
| 3800@20V | |
| 3100 | |
| 45.5 | |
| 9.2 | |
| 97.5 | |
| 12.4 | |
| -55 | |
| 150 | |
| 7.7@20V|8.8@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the AO4425 power MOSFET from Alpha & Omega Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3100 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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