| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 6.2 | |
| 40@10V | |
| 22.7@4.5V|46.5@10V | |
| 46.5 | |
| 2417@30V | |
| 3100 | |
| 12.7 | |
| 6.1 | |
| 44 | |
| 9.8 | |
| -55 | |
| 150 | |
| 32@10V|40@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
This AO4421 power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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