| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±10 | |
| 0.1 | |
| 10000 | |
| 1 | |
| 10400@4V | |
| 1.43@10V | |
| 1.43 | |
| 7.5@10V | |
| 250 | |
| 130 | |
| 55 | |
| 120 | |
| 24 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.25(Max) |
| Largeur du paquet | 1.65(Max) |
| Longueur du paquet | 3.05(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-59 |
| 3 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's 3LP01C-TB-E power MOSFET can provide a solution. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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