Toshiba2SC5200-O(Q)GP BJT
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Tray
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 230 | |
| 230 | |
| 5 | |
| 150 | |
| 1.5 | |
| 3@0.8A@8A | |
| 15 | |
| 5000 | |
| 80@1A@5V | |
| 150000 | |
| -55 | |
| 150 | |
| Tray | |
| Installation | Through Hole |
| Hauteur du paquet | 26 mm |
| Largeur du paquet | 5.2(Max) mm |
| Longueur du paquet | 20.5(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3PL |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to Toshiba, your circuit can handle high levels of voltage using the NPN 2SC5200OQ general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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