| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Emitter | |
| 2 | |
| 60 | |
| 50 | |
| 5 | |
| 0.25@10mA@100mA | |
| 0.15 | |
| 100 | |
| 200@2mA@6V | |
| 300 | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 5 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SMV |
| 5 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the NPN 2SC4207-GR(TE85L,F general purpose bipolar junction transistor, developed by Toshiba, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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