| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 150 | |
| 1.2@50mA@500mA | |
| 0.45@50mA@500mA | |
| 1.5 | |
| 1000 | |
| 200@100mA@5V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 |
| Largeur du paquet | 5.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC4027T-TL-H GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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