Diodes Incorporated2DB1713-13GP BJT
Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 15 | |
| 12 | |
| 6 | |
| 0.25@30mA@1.5A | |
| 3 | |
| 100 | |
| 270@500mA@2V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 2.5 |
| Longueur du paquet | 4.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
Compared to other transistors, the PNP 2DB1713-13 general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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